ANN ARBOR, MI
A recent study by Dr. Taishi Kimura, published in Applied Physics Letters, advances our understanding of divacancy (VV) defect formation in silicon carbide (4H-SiC)—a material gaining attention as a scalable platform for quantum technologies. VV centers, known for their optically addressable spin states, are key candidates for solid-state quantum sensors and communication nodes. However, the underlying mechanisms that govern their formation have remained elusive.
Kimura and colleagues adopted a computationally guided experimental approach to probe VV formation by combining first-principles predictions with annealing experiments on electron-irradiated 4H-SiC. Samples were annealed at three temperatures—1123 K, 1273 K, and 1473 K—for varying durations. The team observed that the photoluminescence (PL) intensity, a signature of VV defects, peaked at 1273 K. This finding not only validates theoretical predictions but also points to 1273 K as the thermal sweet spot for efficient VV generation without triggering defect migration.
These insights mark a significant step in engineering quantum-grade SiC materials. By pinpointing the optimal thermal conditions for defect control, Kimura’s work lays the foundation for reproducible and scalable fabrication of quantum devices. As quantum technology scales from lab research to real-world systems, such defect-level precision will be essential for performance and reliability.
Please see the full study in Applied Physics Letters.
