ANN ARBOR, MI
The Materials Research Department at Toyota Research Institute of North America (TRINA) has achieved a major milestone in quantum sensor design by developing a compact and efficient hexagonal boron nitride (hBN)-based device. Published in Nano Letters, the study showcases a new generation of hBN-integrated quantum sensors that dramatically improve optical readout and signal quality using spin-active boron vacancy (VB⁻) defects.
Traditional quantum sensing platforms using hBN have faced limitations due to inefficient microwave waveguide designs, leading to low optically detected magnetic resonance (ODMR) contrast and high RF power demands. TRINA researchers overcame these challenges by designing a novel single-port coplanar waveguide (CPW) that supports both optical and microwave excitation on-chip. This approach enhances impedance stability and concentrates RF magnetic fields precisely at the sensor location—without altering the spin properties of the VB⁻ defects.
With this innovation, the team achieved an impressive ∼28% ODMR contrast at only 400 mW of microwave power—three times the efficiency and five times lower RF power consumption compared to previous generations. The compact form factor and low-power operation make the sensor highly suitable for scalable applications in magnetic field detection and integrated quantum sensing platforms. This development marks a significant step toward practical, chip-compatible quantum devices.
Please see the complete work published in Nanoletters
